| 摘要 |
An angular rate sensor including: a silicon-on-insulator (SOI) substrate having a substrate, an oxide layer formed above the substrate, and a semiconductor layer formed above the oxide layer; a tuning-fork type vibrating portion obtained by processing the semiconductor layer and the oxide layer and formed of the semiconductor layer; a driving portion which generates flexural vibration of the vibrating portion; and a detecting portion which detects an angular rate applied to the vibrating portion. The vibrating portion has a supporting portion and two beam portions formed in a shape of cantilevers supported by the supporting portion; a pair of the driving portions is formed above each of the two beam portions, each of the driving portions having a first electrode layer, a piezoelectric layer formed above the first electrode layer, and a second electrode layer formed above the piezoelectric layer; and the detecting portion is formed above each of the two beam portions, the detecting portion being disposed between the pair of driving portions and having a first electrode layer, a piezoelectric layer formed above the first electrode layer, and a second electrode layer formed above the piezoelectric layer.
|
