发明名称 |
METHODS FOR ERASING MEMORY DEVICES AND MULTI-LEVEL PROGRAMMING MEMORY DEVICE |
摘要 |
A memory (150) includes a first charge storage region (164A) spaced apart from a second charge storage region (164B) by an isolation region (170). Techniques for erasing a memory (150) are provided in which electrons are Fowler-Nordheim (FN) tunneled out of at least one of the charge storage regions (164 A, B) into a substrate (154) to erase the at least one charge storage region of the memory (150). Other techniques are provided for programming a single charge storage region at multiple different levels or states. |
申请公布号 |
WO2007117610(A2) |
申请公布日期 |
2007.10.18 |
申请号 |
WO2007US08596 |
申请日期 |
2007.04.05 |
申请人 |
SPANSION LLC;ZHENG, WEI;DING, MENG |
发明人 |
ZHENG, WEI;DING, MENG |
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