SYSTEM FOR INTRODUCING A PRECURSOR GAS TO A VAPOR DEPOSITION SYSTEM
摘要
<p>A system for introducing a precursor vapor to a processing chamber (10, 110) configured for forming a thin metal on a substrate (25, 125) is described. The vapor delivery system includes means for introducing a dilution gas to the precursor vapor and adjusting the spatial distribution of the dilution gas addition in order to affect improvements to the properties of the deposited film.</p>
申请公布号
WO2007117898(A1)
申请公布日期
2007.10.18
申请号
WO2007US64466
申请日期
2007.03.21
申请人
TOKYO ELECTRON LIMITED;TOKYO ELECTRON AMERICA, INC.;SUZUKI, KENJI;GOMI, ATSUSHI
