发明名称 |
CO-INTEGRATION OF MULTI-GATE FET WITH OTHER FET DEVICES IN CMOS TECHNOLOGY |
摘要 |
<p>The present invention relates to a CMOS circuit device on a SOI substrate with an oriented silicon surface, comprising on a first substrate region a FET that has a FET channel region of a first conductivity type, and comprising on a second substrate region a FinFET that has a FinFET channel region of a second conductivity type which is opposite to the first conductivity type. The invention also relates to a method for fabricating such a CMOS circuit device. The fabrication of the multi-gate planar FET comprises, at an intermediate step, forming a FET channel stack with an alternating sequence of layers of a FET material and of a sacrificial material and containing main FET -channel faces, which have the same orientation as the oriented silicon surface. According to the invention, a co-integration of multi-gate FET devices is achieved that ensures high carrier mobilities for both NMOS and PMOS FETs.</p> |
申请公布号 |
WO2007115954(A1) |
申请公布日期 |
2007.10.18 |
申请号 |
WO2007EP53106 |
申请日期 |
2007.03.30 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;ST MICROELECTRONICS CROLLES 2 SAS;POUYDEBASQUE, ARNAUD;CERUTTI, ROBIN |
发明人 |
POUYDEBASQUE, ARNAUD;CERUTTI, ROBIN |
分类号 |
H01L27/12;H01L21/84;H01L29/04;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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