HALL ELEMENT AND MAGNETIC SENSOR

摘要

A highly sensitive Hall element which improves an S/N ratio per current is provided by using a low-concentration n-well within an appropriate range. The Hall element is provided with a p-type semiconductor substrate layer (21) composed of a p-type silicon, and an n-type impurity region (22) arranged on the surface of the p-type semiconductor substrate layer (21), and the n-type impurity region (22) functions as a magnetically sensitive section (26). On the surface of the n-type impurity region (22), a p-type impurity region (23) is arranged, and on the side portion of the p-type impurity region (23), an n-type region (24) is arranged. On the periphery of the n-type impurity region (22), a p-type substrate region (21a) having the same resistivity as that of the p-type semiconductor substrate layer (21) is arranged. The impurity concentration (N) of the n-type impurity region (22) functioning as the magnetically sensitive section (26) is preferably 1X10<SUP>16</SUP>-3X10<SUP>16</SUP>(atoms/cm<SUP>3</SUP>), and the distribution depth (D) of the impurity concentration is preferably 3.0-5.0µm.