发明名称 PIEZOELECTRIC THIN FILM DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To prevent a frequency impedance characteristic from being affected by a spurious in a piezoelectric thin film device including single or multiple piezoelectric thin film resonators. <P>SOLUTION: In the piezoelectric thin film resonator 1, a piezoelectric substance thin film 14 is supported on a support base 11 via an adhesive layer 12. An upper surface electrode 15 and a lower surface electrode 13 having a predetermined pattern are formed on an upper surface and a lower surface of the piezoelectric substance thin film 14, respectively. An additional film 16 for adding mass to an outside of an excitation area 141 is formed on the upper surface of the piezoelectric substance thin film 14 overlapping over the upper surface electrode 15. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007274660(A) 申请公布日期 2007.10.18
申请号 JP20060142658 申请日期 2006.05.23
申请人 NGK INSULATORS LTD 发明人 OSUGI YUKIHISA;YAMAGUCHI SHOICHIRO;OI TOMOYOSHI
分类号 H03H9/17;H01L41/09;H01L41/18;H01L41/22;H01L41/253;H01L41/29;H01L41/313 主分类号 H03H9/17
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