| 摘要 |
PROBLEM TO BE SOLVED: To provide a polymer, especially suitably used for the purification of another polymer used in a semiconductor-producing process, and reducing the generation of defects in a resist pattern formed by using the polymer obtained from the purification process. SOLUTION: This polymer (L) is provided by having 17 to 20 (J/cm<SP>3</SP>)<SP>1/2</SP>range solubility parameter and 0.005 to 1 m<SP>2</SP>/g range specific surface area. COPYRIGHT: (C)2008,JPO&INPIT |
