| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor luminous element capable of obtaining full reliability, even while driving it at a high temperature and high output, a method for manufacturing a nitride semiconductor luminous element for manufacturing the nitride semiconductor luminous element, and a nitride semiconductor transistor element capable of improving the reliability. SOLUTION: A coated film is formed in a light beam outgoing section, the coated film is formed of the nitride semiconductor luminous element, containing a nitride crystal of aluminum or acid nitride crystal of aluminum. The method for manufacturing the nitride semiconductor luminous element is also disclosed. In addition, the nitride semiconductor transistor element, where the gate insulating film includes the nitride crystal of aluminum or the acid nitride crystal of aluminum, is provided. COPYRIGHT: (C)2008,JPO&INPIT
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