| 摘要 |
PROBLEM TO BE SOLVED: To make reliability of read-out data high and to make life time of elements long without increasing the number of memory cells for reference (reference cell). SOLUTION: The 1T1C type ferromagnetic memory is provided with first memory cells 101-11 to 101-m1 applying a high level potential to second bit lines /BL1 to /BLm when word lines for data WL1 to WLn are set to a high level, and second memory cells 101-12 to 101-m2 applying a low level potential to the second bit lines when the word lines for data is set to a high level. And the memory is constituted so that surface area of a ferromagnetic capacitors Cr in the first and the second memory cells is larger than surface area of a ferromagnetic capacitor Cd in memory cells for data 102-11 to 102-mn. COPYRIGHT: (C)2008,JPO&INPIT
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