| 摘要 |
<p>A method for forming a metal carbide or metal carbonitride film on a substrate using a vapor deposition process. The method includes comprises introducing a first process material, such as a film precursor, to the substrate followed by introducing a second process material, such as a film reducing agent, to the substrate, whereby plasma can be formed during the introduction of the second process material in order to assist reduction of the first process material on the substrate. Additionally, the temperature of the substrate is elevated to a value approximately equal to or greater than the decomposition temperature of the first process material in order to improve adhesion properties for the metal carbide or metal carbonitride film.</p> |
