NONVOLATILE MEMORY ELEMENT AND ITS MANUFACTURING METHOD

摘要

A nonvolatile memory element comprises a first electrode (2), a second electrode (6) formed above the first electrode (2), a variable resistive film (4) which is formed between the first electrode (2) and the second electrode (6) and whose resistance value is increased or decreased depending on an electric pulse applied between the electrodes (2, 6), and an interlayer insulating film (3) provided between the first electrode (2) and the second electrode (6). In the interlayer insulating film (3), an opening extending from its surface to the first electrode (2) is formed. The variable resistive film (4) is formed on the inner wall surface of the opening. The inner area of the opening formed by the variable resistive film (4) is filled with an embedded insulating film (5).