发明名称 |
HIGHLY HEAT-RESISTANT SYNTHETIC POLYMER COMPOUND AND HIGH WITHSTAND VOLTAGE SEMICONDUCTOR DEVICE |
摘要 |
<p>The outer surface of a wide-gap semiconductor device is covered with a synthetic polymer compound. The synthetic polymer compound is formed by linking a plurality of third organosilicon polymers through covalent bonding which is formed by addition reaction, and has a three-dimensional steric structure. The third organosilicon polymers are obtained by linking one or more kinds of first organosilicon polymers having a bridge structure formed by siloxane bonds (Si-O-Si bonds) with one or more kinds of second organosilicon polymers having a linear structure formed by siloxane bonds. Insulating ceramic fine particles having high heat conductivity are preferably mixed with the synthetic polymer compound.</p> |
申请公布号 |
KR20070102515(A) |
申请公布日期 |
2007.10.18 |
申请号 |
KR20077016042 |
申请日期 |
2007.07.13 |
申请人 |
THE KANSAI ELECTRIC POWER CO., INC.;ADEKA CORPORATION |
发明人 |
SUGAWARA YOSHITAKA;SHOJI YOSHIKAZU |
分类号 |
C08G77/42;C08G77/44;C08K3/14;C08K3/22;C08K3/28;C08L83/04;H01L23/29;H01L23/31;H01L29/744;H01L29/861;H01L29/868;H01L31/12 |
主分类号 |
C08G77/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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