| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for improving breakdown voltage between source and drain or between gate and drain, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes a gate electrode 32 provided on a semiconductor layer 12, a source electrode 34 and a drain electrode 30 with the gate electrode 32 in-between, a field plate 42 provided on a region between the drain electrode 30 and an element separation region 36 located on extension of direction of finger as an elongated direction of the drain electrode 30. COPYRIGHT: (C)2008,JPO&INPIT
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