发明名称 |
Hard Mask Layer Stack And A Method Of Patterning |
摘要 |
A hard mask layer stack for patterning a layer to be patterned includes a carbon layer disposed on top of the layer to be patterned, a first layer of a material selected from the group of SiO<SUB>2 </SUB>and SiON disposed on top of the carbon layer and a silicon layer disposed on top of the first layer. A method of patterning a layer to be patterned includes providing the above described hard mask layer stack on the layer to be patterned and patterning the silicon hard mask layer in accordance with a pattern to be formed in the layer that has to be patterned.
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申请公布号 |
US2007243707(A1) |
申请公布日期 |
2007.10.18 |
申请号 |
US20070686501 |
申请日期 |
2007.03.15 |
申请人 |
QIMONDA AG |
发明人 |
MANGER DIRK;BOUBEKEUR HOCINE;VERHOEVEN MARTIN;NAGEL NICOLAS;TATRY THOMAS;CASPARY DIRK;MARKERT MATTHIAS;BAUCH LOTHAR;BLAWID STEFAN;GUTSCH MANUELA;LATTARD LUDOVIC;ROESSIGER MARTIN;VOGT MIRKO |
分类号 |
H01L21/44;G03F1/00;H01L21/302 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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