发明名称 Semiconductor memory device with temperature sensing device and operation thereof
摘要 A semiconductor memory device includes a thermosensor that senses present temperatures of the device and confirms whether the temperature values are valid. The thermosensor includes a temperature sensing unit, a storage unit and an initializing unit. The temperature sensing unit senses temperatures in response to a driving signal. The storage unit stores output signals of the temperature sensing unit and outputs temperature values. The initializing unit initializes the storage unit after a predetermined time from an activation of the driving signal. A driving method includes driving the thermosensor in response to the driving signal, requesting a re-driving after a predetermined time from the activation of the driving signal, and re-driving the thermosensor in response to the driving signal input again.
申请公布号 US2007242540(A1) 申请公布日期 2007.10.18
申请号 US20060647409 申请日期 2006.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM KYUNG-HOON;MORAN PATRICK B.
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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