| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for selecting a wafer to be used, in a manufacturing process for a composite material wafer, especially a silicon-on insulator type wafer. <P>SOLUTION: This method comprises a step 31 for preparing two wafers and a step 41 for making one wafer stick to the other wafer, especially for making joint; and further in this method, a step 33 wherein the edge roll-off value is decided to reduce the amount of crystal defect generated at or near the boundary of the wafer is executed. The edge roll-off value is decided at a position away from the edge of the wafer by about 0.5-2.5 mm, and/or decided by using the second derivative of height profile. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
