| 摘要 |
PROBLEM TO BE SOLVED: To provide a treatment method for obtaining characteristics so as to be incorporated into a method for manufacturing a common silicon wafer, by defining a role of the rear surface of the silicon wafer in a manufacturing method, and grasping the characteristics required therefor. SOLUTION: The method for manufacturing the silicon wafer comprises a pre-cleaning process for cleaning a silicon wafer whose front surface and rear surface are mirror-finished, and a rapid thermal (RTP) furnace process or an epitaxial growing process. The pre-cleaning process includes a hydrofluoric acid (HF) process and a subsequent deionized water (DIW) process as final processes of the pre-cleaning process. COPYRIGHT: (C)2008,JPO&INPIT
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