| 摘要 |
PROBLEM TO BE SOLVED: To provide nitride system semiconductors group III-V compound laser with a long service life, by reducing the current density per unit resonator. SOLUTION: When a light confinement coefficientΓbecomes small, internal loss is reduced, and current density is also reduced per unit resonator length.Γis set so as to be 1.5 or larger and 3.0 or smaller, and the resonator length is set so as to be 800μm or larger and 2,000μm or smaller. As a result of this, since it is possible to increase the resonator length, while making the internal loss smaller, as compared to that in a conventional manner. It is possible to obtain a nitride system semiconductor group III-V compound laser with a long file, by reducing the current density per unit resonator. COPYRIGHT: (C)2008,JPO&INPIT
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