SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To realize a good element separation characteristic in a miniaturized NAND-type flash memory without lowering a processing yield of an element separation groove. SOLUTION: Memory cells of a NAND-type flash memory are arranged into a matrix in a line and column directions in a memory array region of a semiconductor substrate 1. A plurality of memory cells arranged in the line direction are separated from each other by an element separation groove 3 having a long and thin, belt-shaped planar shape that extends in the column direction. The element separation groove 3 has a diameter at its bottom in the line direction that is larger than that in the line direction near the front surface. COPYRIGHT: (C)2008,JPO&INPIT