| 摘要 |
PROBLEM TO BE SOLVED: To materialize a semiconductor device whose on-resistance is low, which easily becomes normally-off. SOLUTION: The semiconductor device is composed of an n-GaN layer 11, a p-GaN layer 12 and an n-GaN layer 13 on the n-GaN layer 11, an n<SP>-</SP>-GaN layer 14 on the p-GaN layer 12, and an n-GaN layer 21 on the n-GaN layer 13. By lowering the impurity concentration of the n<SP>-</SP>-GaN layer 14, the normally-off is made easy. Further, by raising the impurity concentration of the n-GaN layer 13 and the n-GaN layer 21, the on-resistance is made low. COPYRIGHT: (C)2008,JPO&INPIT
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