| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growth device capable of obtaining a thin film with the same characteristic by easily adjusting substrate temperature, especially, eliminating a temperature difference in each substrate when vapor phase growth is simultaneously performed in the plurality of substrates. SOLUTION: The substrate 11 is supported on the upper surface of a susceptor 13 which is heated with a heater 17 via an adjustment board 18 composed of a material different from that of the susceptor. The substrate is heated via the susceptor and the adjustment board, and also the vapor phase growth is performed in the thin film by supplying a vapor phase material onto the upper surface of the substrate. The substrate temperature in the vapor phase growth is adjusted by adjusting the thickness of the adjustment board. COPYRIGHT: (C)2008,JPO&INPIT
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