VERTICAL RESONATOR TYPE LIGHT EMITTING DIODE

摘要

Provided is a novel vertical resonator type light emitting diode (1) wherein the structure of a reflection layer on a light emitting side is simplified and light emission output is not easily deteriorated even on a high temperature side. The vertical resonator type light emitting diode is provided with an active layer (5) to be a light emitting layer; and a first reflection layer (3) on a light reflecting side and a second reflection layer (9) on a light emitting side, which are formed by having the active layer (5) in between. The first and the second reflection layers (3, 9) have a structure wherein a plurality of pairs of semiconductor alternating layers are laminated. The pair is composed of the semiconductor alternating layers having different refractive indexes. The number of the pairs of the second reflection layers (9) is 1/10 of the number of the pairs of the first reflection layers (3) but not more than 1/3. When the number of the pairs of the first reflection layers is 11 or more but not more than 41, light emission output can be further improved.