| 摘要 |
<p>A method for manufacturing a photo mask for a focus drilling exposure method is provided to manufacture a photo mask with a uniform critical dimension of a target pattern by performing an OPC(Optical Proximity Correct) for a random pitch and a size. A method for manufacturing a photo mask for a focus drilling exposure method includes the steps of: setting the layouts of target patterns to be formed on a wafer(100); arranging the test patterns for the target patterns(110); extracting rule parameters by exposing the test patterns in a focus drilling method(120); performing an OPC for the target patterns to be formed on the wafer by using mask bias rule data(130); and manufacturing the photo mask with data from the OPC performance for obtaining a uniform critical dimension of the target patterns(140).</p> |
