| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photodiode which responds fast to incident light and has a high efficiency. <P>SOLUTION: A comb-shaped periodic irregular structure 8 is provided on a surface of a semiconductor layer 3, a first electrode 1 is disposed on an upper face of a projection of the periodic irregular structure 8, and a second electrode 2 is disposed on a bottom face of the dented part. A surface plasmon resonance is excited by the incident light by means of the first and second electrodes disposed periodically and three-dimensionally, and photons containing near field light are excited at an interface between at least one of the first and second electrodes and a semiconductor by the excited surface plasmon. As the near field light is caused to generate paired electrons-holes in a depletion layer in the semiconductor layer 3 near the first electrode 1 and the second electrode 2, a photoelectric current can be obtained. <P>COPYRIGHT: (C)2008,JPO&INPIT |
