| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing gallium-nitride based compound semiconductor light-emitting element with an excellent light-emitting characteristic and high light extraction efficiency, and to provide a lamp. <P>SOLUTION: The method is the one for manufacturing the GaN based semiconductor light-emitting element including at least: a buffer layer, an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer on a translucent substrate having a projected/recessed shape. The buffer layer is deposited by a spattering method with the use of a spattering device having a fluctuation magnetron magnetic circuit. The buffer layer is formed with AlN, ZnO, Mg, and Hf. <P>COPYRIGHT: (C)2008,JPO&INPIT |
