| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which can form a film without using an evaporable metal as a raw material and a vaporizing device for a raw metallic material. <P>SOLUTION: The plasma treatment apparatus 1 comprises: treatment vessels 31 and 32; a gas supply means 60 which supplies a gas containing an halogen atom (such as HCl); plasma generation means 42 and 44; a substrate-mounting stage 33 for mounting a semiconductor substrate (W) thereon; a metallic member 11 which discharges a precursor of the film to be formed on the semiconductor substrate (W), by being treated with plasma; first wiring 19 for supplying a first high-frequency power to the metallic member 11; and second wiring 39 for supplying a second high-frequency power to the substrate-mounting stage 33. The apparatus does not need the vaporizing device, but has a structure suitable for carrying out etching and CVD in one apparatus. <P>COPYRIGHT: (C)2008,JPO&INPIT |
