CRITICAL DIMENSION EFFECTS CORRECTION IN RASTER PATTERN GENERATOR

摘要

Critical dimension effects, related to electron beam lithography, are corrected in raster pattern generators. A method for generating a flash includes computing dose correction multipliers taking into account fogging scattering effects, backscattering effects and fast secondary scattering effects; and using the dose correction multipliers to generate the flash. The run-time proximity corrections employ a raster scan writing strategy and a rasterized pattern data representation in an electron beam pattern generating system.