SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要
<p>In a monolithic double wavelength laser device comprising an infrared laser part (100) and a red laser part (130) mounted on an identical n-type GaAs substrate (101), a p-type first clad layer (105) in the infrared laser part (100) and a p-type first clad layer (135) in the red laser part (130) are formed of the same material and are different from each other in impurity concentration.</p>
申请公布号
WO2007116564(A1)
申请公布日期
2007.10.18
申请号
WO2006JP324953
申请日期
2006.12.14
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;MURASAWA, SATOSHI;TAKAYAMA, TORU;NAKAYAMA, HISASHI;FUJIMOTO, YASUHIRO;KIDOGUCHI, ISAO
