| 摘要 |
PROBLEM TO BE SOLVED: To provide a top gate thin film transistor by depositing a hydrophilic buffer layer on a flexible substrate, not only to facilitate the formation of a nano particle film, but also to use a sintered nano particles as an active layer, to prepare the top gate transistor where a gate insulating layer is formed on the nano particle layer, that can be driven at low voltage and uses the nano particles on a flexible substrate that can be prepared at a low temperature, and a method for manufacturing the same. SOLUTION: The system includes: a step that forms and sinters the nano particle film on the substrate, a step that forms a source electrode and a drain electrode on the nano particle film; a step that deposits an insulator on an upper portion of the nano particle film where the source and drain electrodes are formed to form a gate insulating layer; and a step that forms a top gate electrode on an upper portion of the gate insulating layer. COPYRIGHT: (C)2008,JPO&INPIT
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