| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize a fine semiconductor device with short channel length, while preventing single channel effect. SOLUTION: An impurity region 104 in the form of a dot pattern is formed in a channel forming region 103. A channel width W is substantially subdivided by the dot pattern to alleviate the fall of a threshold voltage associated with short channel effect. On the other hand, since the dot pattern is formed deeply in the interior of the semiconductor, the spread of a drain side depletion layer to the channel region 103 can be prevented. COPYRIGHT: (C)2008,JPO&INPIT
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