| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for ensuring improved etching control in terms of semiconductor fabrication method containing an insulating film dry etching process. SOLUTION: This method forms a treatment film 12 which serves as an insulating film having a carbon element, on a stopper film 11 in an infrastructure 10. This method forms a mask pattern 13a on the treatment film, forms a hardened portion 12a on the treatment film by injecting energy such as an electron beam to the treatment film with the mask pattern set as a mask, and then forms a groove 12b by providing anisotropic etching to the hardened portion of the treatment film with the mask pattern set as a mask. COPYRIGHT: (C)2008,JPO&INPIT
|
