| 摘要 |
PROBLEM TO BE SOLVED: To attain a surface light emitting type semiconductor laser element having a mesa post which prevents an increase in dislocation in an active layer and is excellent in reliability. SOLUTION: The surface light emitting type semiconductor laser element 20 includes a semiconductor substrate 1, an upper multi-layer reflective film 6 and a lower multi-layer reflective film 2 which are located on the semiconductor substrate 1 and composed of a plurality of laminated semiconductor layers, an active layer which is formed between the upper multi-layer reflective film 6 and the lower multi-layer reflective film 2 and composed of a semiconductor layer not containing Al, a mesa post 9 whose skirt is a semiconductor layer lower than the active layer, and a current-constriction layer which is formed in the semiconductor layer composing the upper multi-layer reflective film 6 or the lower multi-layer reflective film 2 at a position where the mesa post is formed and a part of the semiconductor layer containing Al is selectively oxidized. COPYRIGHT: (C)2008,JPO&INPIT
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