MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC HEAD, AND MAGNETIC REPRODUCING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a magnetroresistive effect element which includes a vertical current-passing type spin valve film having a nanocontact structure between magnetic materials to achieve high magnetroresistance. SOLUTION: The magnetroresistive effect element includes a magnetization fixing layer having a ferromagnetic film of which the magnetization direction is fixed virtually in a single direction; a magnetization free layer having a ferromagnetic film of which the magnetization direction changes depending on an external magnetic field; a composite spacer layer interposed between the magnetization fixing layer and the magnetization free layer and containing an insulation portion and a magnetic metal portion; and a pair of electrodes so disposed as to cause a sense current to flow perpendicular to the film surfaces of the magnetization fixing layer, complex spacer layer, and magnetization free layer. A magnetic layer constituting the magnetization fixing layer and in contact with the composite spacer layer has a bcc (body-centered cubic lattice) structure. COPYRIGHT: (C)2008,JPO&INPIT