| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which enables simple and quick evaluation of the physical properties of semiconductor material consisting of metal oxide particles or metal sulfide particles, in particular, constitutional component consisting of amount of crystal defects, degree of crystallization and crystalline form type and/or amorphous type, using a nondestructive means and additionally, to provide a physical property evaluating device used for the implementation of these methods. SOLUTION: The physical property evaluating method of samples, irradiated with an exciting light, measuring the amounts of luminescences at a specific wavelengths generated from irradiation with the exciting light is characterized by measuring the amount of luminescence at the specific wavelength of the reference sample where physical property used as evaluation object is known; preliminarily deriving correspondence between physical properties of the reference sample and the amount of luminescence measured; measuring the amount of luminescence at the specific wavelength of a test sample, where physical property used as evaluation object is unknown; and finally evaluating the physical property of the test sample concerned through the comparison of the amount of luminescence from the test sample measured with the correspondence to the reference sample. COPYRIGHT: (C)2008,JPO&INPIT
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