| 摘要 |
The present invention provides a manufacturing method for an integrated semiconductor contact structure having an improved Aluminum fill comprising the steps of: forming contact holes in an insulation layer provided on a wafer, said contact holes having a respective bottom and respective sidewalls, said bottoms including a respective conductive area; introducing said wafer into a first PVD deposition chamber, said first PVD deposition chamber including a wafer bias means; and cold depositing a first Aluminum layer on the wafer in said first PVD deposition chamber, said first Aluminum layer covering said bottoms and said sidewalls of said contact holes and forming a seed layer; wherein during said step of cold depositing said first Aluminum layer on the wafer in said first PVD deposition chamber said wafer bias means is set to a bias in the range between 20 W and 700 W or -50 V to -800 V.
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