| 摘要 |
<p>A method of forming a semiconductor device comprises forming a control electrode (108) over a portion of a semiconductor layer (104), forming recesses (122) extending into the semiconductor layer (104) on opposing sides of the control electrode (108), and forming doped regions (150) in the semiconductor layer through the recesses (122). The doped regions (150) form current electrode regions of the semiconductor device and each doped region extends into the semiconductor layer (104) from at least a base of a recess (122). The method further comprises forming, after forming the doped regions, strained semiconductor regions (124) in the recesses (122), wherein a junction between each doped region (150) and the semiconductor layer (104) is formed below an interface between a strained semiconductor region (124) and the semiconductor layer (104).</p> |
