| 摘要 |
PROBLEM TO BE SOLVED: To restrain lowering of current driving operability while raising a breakdown voltage of a parasitic bipolar of a driver transistor. SOLUTION: A source 7s and a drain 7d of a second conductivity type spaced out mutually are formed in a semiconductor substrate 1 of a first conductivity type. A gate electrode 11 is formed via a gate insulating film 9 on the semiconductor substrate 1 between the source 7s and the drain 7d. A plurality of island-like back gate diffusion layers 7bs of a first conductivity type are formed in contact with the semiconductor substrate 1 inside the source 7s. A plurality of back gate diffusion layers 7bs are arranged with a space inside the source 7s. A grooved contact hole 15bs is formed over on a plurality of back gate diffusion layers 7bs and on the source 7s. COPYRIGHT: (C)2008,JPO&INPIT
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