METHOD FOR CARRYING OUT UNIFORMLY PLASMA ETCHING OF WAFER SURFACE USING SILICON ELECTRODE BOARD OF ALMOST THE SAME SIZE AS WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for carrying out uniformly the plasma etching of a wafer surface using a silicon electrode board of the almost same size as the wafer. SOLUTION: In the method for carrying out the plasma etching of the wafer surface using the silicon electrode board of almost the same size as the wafer in a range of A/B=1.0-1.1, when the diameter of the silicon electrode board is set to A, and the diameter of the wafer is set to B, the silicon electrode plate having the specific resistance Rc of the center of the silicon electrode plate in a range of Rc/Rs=10-4to 2-3being extremely low compared with the specific resistance Rs of the outermost periphery of the silicon electrode plate is used when the outermost specific resistance of the silicon electrode is set to Rs, and the specific resistance of the center of the silicon electrode plate is set to Rc. COPYRIGHT: (C)2008,JPO&INPIT