| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has high resistance to a surge voltage, and is small in size and inexpensive. SOLUTION: The semiconductor device 100 is equipped with gate wiring, which is connected to the gate electrodes of transistor cells TC formed on a semiconductor substrate 1 and formed as a plane gate wiring layer GH that is linked in a two-dimensional manner covering the transistor cells TC through a first interlayer insulating film Z1, and drain wiring which is connected to the drains of the transistor cells TC and formed as a plane drain wiring layer DH that is linked in a two-dimensional manner confronting the gate wiring layer GH through a second interlayer insulating film Z2. COPYRIGHT: (C)2008,JPO&INPIT
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