| 摘要 |
PROBLEM TO BE SOLVED: To reduce the influence of high-frequency noise in a semiconductor device. SOLUTION: The semiconductor device 1 comprises a semiconductor substrate 2 and an analog circuit formed thereon. The analog circuit includes a diode 50. At least one section of an interconnection (22, 23, 31, 51, and 52) connected to one end of the diode 50 is coated with a magnetic substance 10. COPYRIGHT: (C)2008,JPO&INPIT
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