发明名称 Methods for controllable doping of aluminum nitride bulk crystals
摘要 Fabrication of doped and undoped stoichiometric polycrystalline AlN ceramics with high purity is accomplished by, for example, reacting Al pellets with nitrogen gas. Such polycrystalline AlN ceramics may be utilized in the fabrication of high purity AlN single crystals, which may be annealed to enhance a conductivity thereof.
申请公布号 US2007243653(A1) 申请公布日期 2007.10.18
申请号 US20070731790 申请日期 2007.03.30
申请人 CRYSTAL IS, INC. 发明人 MORGAN KENNETH E.;SCHOWALTER LEO J.;SLACK GLEN A.
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址