发明名称 |
Semiconductor Light Emitting Device |
摘要 |
For a semiconductor light emitting device using GaInNAs as an active layer, since GaInNAs includes N, the critical thickness is reduced and it is difficult to lengthen the wavelength of a laser beam. A semiconductor light emitting device is prepared, which has an active layer comprising a quantum well layer formed by successively stacking a GaInNAs layer and a GaInAs layer and GaAs barrier layers stacked on both sides of the quantum well layer. The quantum level of the conduction band is present above the conduction band edge of the GaInAs layer.
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申请公布号 |
US2007241344(A1) |
申请公布日期 |
2007.10.18 |
申请号 |
US20070733229 |
申请日期 |
2007.04.10 |
申请人 |
ADACHI KOICHIRO;NAKAHARA KOUJI;KASAI JUN-ICHI;KITATANI TAKESHI |
发明人 |
ADACHI KOICHIRO;NAKAHARA KOUJI;KASAI JUN-ICHI;KITATANI TAKESHI |
分类号 |
B82Y20/00;H01S5/183;H01S5/343 |
主分类号 |
B82Y20/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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