发明名称 |
Method for writing a large-area closed curvilinear pattern with a cartesian electron beam writing system |
摘要 |
A method for operating a Cartesian-type electron beam (e-beam) lithography (EBL) tool enables the efficient and precise writing of a closed curvilinear pattern, such as a circle, over a wide area of a workpiece. The curvilinear pattern overlies a plurality of contiguous fields of the EBL tool's x-y positioning stage, and the stage is moved along a path defined by the contiguous fields. Alignment marks associated with the first and next-to-last fields are formed on the specimen. The alignment marks are used to adjust the shape of the last field so that when the e-beam is scanned in the last field there is a substantially continuous connection of the pattern between the next-to-last field and the first field. The invention is particularly applicable to making a master disk with concentric circular tracks for nanoimprinting patterned magnetic recording disks.
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申请公布号 |
US2007241291(A1) |
申请公布日期 |
2007.10.18 |
申请号 |
US20060403795 |
申请日期 |
2006.04.12 |
申请人 |
ALBRECHT THOMAS R;BANDIC ZVONIMIR;ROOKS MICHAEL J |
发明人 |
ALBRECHT THOMAS R.;BANDIC ZVONIMIR;ROOKS MICHAEL J. |
分类号 |
H01J37/302 |
主分类号 |
H01J37/302 |
代理机构 |
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代理人 |
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地址 |
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