THE METHOD FOR FORMING SEMICONDUCTOR MEMORY DEVICE

摘要

A method for forming a semiconductor memory device is provided to obtain an enhanced reliability of the device by preventing the damage of a gate insulating layer using a pre-gate pattern. An isolation layer(125) for defining an active region is formed on a substrate(100). A pre-gate pattern is formed within the active region. An intermediate insulating layer is formed on the resultant structure to make the pre-gate pattern enclosed by the isolation layer and the intermediate insulating layer itself. The pre-gate pattern is removed from the resultant structure. A gate pattern is formed on the pre-gate pattern removed portion. The pre-gate pattern includes a silicon nitride layer. The pre-gate pattern is removed by performing two-step wet etching processes on the resultant structure.