| 摘要 |
A repair circuit of a semiconductor memory device is provided to prevent a repair error even though a fuse is cut incompletely, by including a correction part, and to prevent an operation error according to the prior access failure by accessing to a spare cell installed to replace a specific defective cell. A repair circuit(100) of a semiconductor memory device includes a fuse part(110). A detection part(120) is connected to the fuse part, and outputs a detection signal by detecting cutting of the fuse part in response to a fuse enable signal. An output part(140) buffers the output of the detection part. A correction part(130) is located between the detection part and the output part, and corrects the detection signal from the detection part when the fuse part is cut incompletely in response to the input of the fuse enable signal and the detection signal.
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