| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance changing element capable of reducing the variation of operating voltage upon forming. <P>SOLUTION: A resistance changing film 4, in which a metal oxide or a metallic oxynitride containing at least either one of Zr and Hf as a principal constituent is provided with fluorite structure, and a pair of first and second electrodes 2, 6 provided so as to pinch the resistance changing film are provided. The crystal structure of the resistance changing film is provided with Bevan cluster in a part or the whole of it and when V shows a vacancy, in which negative ion is not existing in a negative ion site in the fluorite type crystal structure, M shows the metallic element of the metal oxide or the metallic oxynitride and S shows the maximum octahedron type cavity site in the fluorite type crystal structure, the direction of array of a straight chain type continuous chain of (-S-V-M-V-S-) in the unit cell of the Bevan cluster is provided with the direction of crystal substantially orthogonal to the principal surface of the film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
