| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor element, capable of relaxing the stress generated due to thermal expansion difference between a wiring substrate in flip chip method, and to provide a semiconductor device mounted with the semiconductor element. <P>SOLUTION: The semiconductor element 1 mounted by flip-chip method is provided with a semiconductor substrate 2, an electrode 3 formed on the semiconductor substrate, a cover coating film 4 of insulating body, which is arranged on the electrode so as to form an exposed surface 3a in one part of the upper surface of the electrode 3, an adhesion layer 5 of conductive body, which is formed on the exposed surface 3a of the electrode 3 and the cover coating film 4, and a bump 6 formed on the adhesion layer 5. The area of the exposed surface 3a of the electrode 3 is 20%-50%, with respect to the area of a figure formed, by the outer periphery of a contacting surface between the bump 6 and the adhesion layer 5. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
