SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS

摘要

PROBLEM TO BE SOLVED: To reduce an interface level while suppressing the formation of an interface reaction layer which is formed easily on the interface of a high dielectric film and a semiconductor substrate. SOLUTION: The semiconductor device comprises a single crystal semiconductor substrate 1, an adsorption layer 2 containing a metal element adsorbed to the single crystal semiconductor substrate and having a single periodic structure matching the atomic arrangement on the surface of the single crystal semiconductor substrate, a dielectric film formed on the adsorption layer, and an electrode 4 formed on the dielectric film. Assuming that normal generation enthalpy per unit oxygen isΔHa,ΔHs, andΔHd, respectively, for the oxide of a metal element composing the adsorption layer, the oxide of an element in the single crystal semiconductor substrate, and the oxide of a metal element composing the dielectric film, the adsorption layer and the dielectric film are formed of metal elements satisfying a relationΔHa≥ΔHdandΔHs≥ΔHd. COPYRIGHT: (C)2008,JPO&INPIT