| 摘要 |
The present invention provides an exposure method which illuminates each of patterns, to be subjected to double exposure, on entire surfaces thereof in optimal illumination conditions respectively, and which performs the exposure with high throughput. Upon transferring a pattern of a reticle onto a wafer by the scanning exposure method, first and second pattern areas are formed in advance on the reticle to be adjacent in the scanning direction, and when the first and second pattern areas simultaneously pass across a field of a projection optical system, the first pattern area is illuminated in a first illumination condition by using a first illumination slit of which width in the scanning direction is gradually narrowed, and the second pattern area is illuminated in a second illumination condition by using a second illumination slit of which width in the scanning direction is gradually widened, to thereby expose the wafer.
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