| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an alignment mark that is restrained in deterioration of positioning accuracy, even after passage of an epitaxial film deposition process and high-temperature annealing process. <P>SOLUTION: The alignment mark 14 is formed by a stepwise step difference pattern in a cross-sectional shape. The step difference pattern includes a first step difference pattern 11, formed by digging down a principal surface of a substrate 2; and a second step difference pattern 13, formed by further digging down the principal surface of the substrate 2, in continuation with the first step difference pattern 11 below the first step difference pattern 11 formed by digging down the principal surface of the substrate 2. A sidewall part 17 of the first step difference pattern 11 and a sidewall part 18 of the second step difference pattern 13 are formed at the same angle and is formed so as to have the same crystal orientation. <P>COPYRIGHT: (C)2008,JPO&INPIT |
